SU18-N3 Photo Sensor
Detection distance | 18mm ±10% |
---|---|
Minimum detectable object | Opaque ( Ø1.0 x 10.0mm ) |
Light Emitter | Infrared LED 940 nm |
Operating voltage | DC10 ~ 30V |
Current consumption | 30 mA Max. |
Load current | 100mA Max. at DC24V |
Model / Type | NPN D.on / L.on |
Response time | 1000 Hz |
Ambient illumination | Incandescent light : 5,000 lux max. |
Insulation resistance | 20MΩ min. (DC500V) |
Voltage withstandability | AC100V 60Hz for 60 Sec. |
Opera tetemperature | -10℃ ~ + 55℃ |
Ambient humidity | 45% ~ 85% RH |
Protection degree | IP65 |
Casing material | 鋅合金鍍線 |
Wiring method | Pre-wired Ø4.2 x 2M / 3-wires |
Weight | 70g |
SU18-NP Photo Sensor
Detection distance | 18mm |
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Minimum detectable object | Opaque ( Ø1.0 x 10.0mm ) |
Light Emitter | Infrared LED 940 nm |
Operating voltage | DC12 ~ 24 V |
Current consumption | 30 mA Max. |
Load current | 100mA Max. at DC24V |
Model / Type | NPN D.on / L.on , PNP D.on / L.on |
Response time | 1000 Hz |
Ambient illumination | Incandescent light : 5,000 lux max. |
Insulation resistance | 20MΩ min. (DC500V) |
Voltage withstandability | AC1000V 60Hz for 60 Sec. |
Opera tetemperature | -10℃ ~ + 55℃ |
Ambient humidity | 45% ~ 85% RH |
Protection degree | IP65 |
Casing material | 鋅合金鍍線 |
Wiring method | Pre-wired Ø4.2 x 2 M / 4-wires |
Weight | 70g |
SU18-P3 Photo Sensor
Detection distance | 18mm ±10% |
---|---|
Minimum detectable object | Opaque ( Ø1.0 x 10.0mm ) |
Light Emitter | Infrared LED 940 nm |
Operating voltage | DC10 ~ 30V |
Current consumption | 30 mA Max. |
Load current | 100mA Max. at DC24V |
Model / Type | PNP D.on / L.on |
Response time | 1000 Hz |
Ambient illumination | Incandescent light : 5,000 lux max. |
Insulation resistance | 20MΩ min. (DC500V) |
Voltage withstandability | AC100V 60Hz for 60 Sec. |
Opera tetemperature | -10℃ ~ + 55℃ |
Ambient humidity | 45% ~ 85% RH |
Protection degree | IP65 |
Casing material | 鋅合金鍍線 |
Wiring method | Pre-wired Ø4.2 x 2M / 3-wires |
Weight | 70g |
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